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dc.contributor.authorWeymann, Christian
dc.contributor.authorLichtensteiger, Céline
dc.contributor.authorFernandez-Peña, Stéphanie
dc.contributor.authorNaden, Aaron B.
dc.contributor.authorDedon, Liv R.
dc.contributor.authorMartin, Lane W.
dc.contributor.authorTriscone, Jean-Marc
dc.contributor.authorParuch, Patrycja
dc.date.accessioned2020-11-12T15:30:21Z
dc.date.available2020-11-12T15:30:21Z
dc.date.issued2020-10-27
dc.identifier.citationWeymann , C , Lichtensteiger , C , Fernandez-Peña , S , Naden , A B , Dedon , L R , Martin , L W , Triscone , J-M & Paruch , P 2020 , ' Full control of polarization in ferroelectric thin films using growth temperature to modulate defects ' , Advanced Electronic Materials , vol. Early View , 2000852 . https://doi.org/10.1002/aelm.202000852en
dc.identifier.issn2199-160X
dc.identifier.otherPURE: 270956877
dc.identifier.otherPURE UUID: a8d8ce28-718d-41e1-a2b8-40a5bba95111
dc.identifier.otherRIS: urn:27A9F7566715F9F88649D893EF7C237E
dc.identifier.otherScopus: 85093941639
dc.identifier.otherWOS: 000583855700001
dc.identifier.urihttp://hdl.handle.net/10023/20957
dc.descriptionP.P. and C.W. acknowledge partial support by Swiss National Science Foundation Division II grant 200021_178782. L.R.D. acknowledges support from the US National Science Foundation under grant DMR‐1708615. L.W.M. acknowledges support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Contract No. DE‐AC02‐05‐CH11231 (Materials Project program KC23MP) for the growth and study of defect structures in ferroic materials. A.B.N. gratefully acknowledges support from the Engineering and Physics Sciences Research Council (EPSRC) through grants EP/R023751/1 and EP/L017008/1.en
dc.description.abstractDeterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well-established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO3 thin films is demonstrated-from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy-using changes in the film growth temperature. X-ray diffraction and scanning transmission electron microscopy reveal a variation of c-axis related to out-of-plane strain gradients. These measurements, supported by Ginzburg-Landau-Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built-in field during growth, allowing polarization control not only under specific growth conditions, but ex-situ, for subsequent processing and device applications.
dc.format.extent9
dc.language.isoeng
dc.relation.ispartofAdvanced Electronic Materialsen
dc.rightsCopyright © 2020 The Authors published by Wiley-VCH GmbH, Weinheim. This is an open access article under the terms of the Creative Commons Attribution‐NonCommercial‐NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non‐commercial and no modifications or adaptations are made.en
dc.subjectBuilt-in voltageen
dc.subjectDefect dipolesen
dc.subjectFerroelectric thin filmsen
dc.subjectLead titanateen
dc.subjectPolarization controlen
dc.subjectQD Chemistryen
dc.subjectNDASen
dc.subject.lccQDen
dc.titleFull control of polarization in ferroelectric thin films using growth temperature to modulate defectsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Chemistryen
dc.identifier.doihttps://doi.org/10.1002/aelm.202000852
dc.description.statusPeer revieweden


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