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dc.contributor.authorWang, X.
dc.contributor.authorLi, X. H.
dc.contributor.authorJiang, C.
dc.contributor.authorBrown, C. Tom A.
dc.contributor.authorNing, J. Q.
dc.contributor.authorZhang, K.
dc.contributor.authorYu, Q.
dc.contributor.authorGe, X. T.
dc.contributor.authorWang, Q. J.
dc.contributor.authorZhang, Z. Y.
dc.identifier.citationWang , X , Li , X H , Jiang , C , Brown , C T A , Ning , J Q , Zhang , K , Yu , Q , Ge , X T , Wang , Q J & Zhang , Z Y 2020 , ' Photon-generated carrier transfer process from graphene to quantum dots : optical evidences and ultrafast photonics applications ' , npj 2D Materials and Applications , vol. 4 , 27 .
dc.identifier.otherPURE: 269160148
dc.identifier.otherPURE UUID: 72f69c37-f717-45d1-a6bd-1f0a84ad462b
dc.identifier.otherWOS: 000559817700002
dc.identifier.otherScopus: 85088776044
dc.identifier.otherORCID: /0000-0002-4405-6677/work/86537103
dc.descriptionThe authors acknowledge Natural Science Foundation of China (Grant Nos. 61875222, 61875223, 61605106, 11874390).en
dc.description.abstractGraphene/III–V semiconductor van der Waals (vdW) heterostructures offer potential access to physics, functionalities, and superior performance of optoelectronic devices. Nevertheless, the lack of a bandgap in graphene severely restricts the controllability of carrier properties and therefore impedes its applications. Here, we demonstrate the engineering of graphene bandgap in the graphene/GaAs heterostructure via C and Ga exchange induced by the method of femtosecond laser irradiation (FLI). The coupling of the bandgap-opened graphene with GaAs significantly enhances both the harvest of photons and the transfer of photon-generated carriers across the interface of vdW heterostructures. Thus, as a demonstration example, it allows us to develop a saturable absorber combining a delicately engineered graphene/GaAs vdW heterostructure with InAs quantum dots capped with short-period superlattices. This device exhibits significantly improved nonlinear characteristics including <1/3 saturation intensity and modulation depth 20 times greater than previously reported semiconductor saturable absorber mirrors. This work not only opens the route for the future development of even higher performance mode-locked lasers, but the significantly enhanced nonlinear characteristics due to doping-induced bandgap opening of graphene by FLI in the vdW heterostructures will also inspire wide applications in photonic and optoelectronic devices.
dc.relation.ispartofnpj 2D Materials and Applicationsen
dc.rightsCopyright © The Author(s) 2020. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
dc.subjectQC Physicsen
dc.titlePhoton-generated carrier transfer process from graphene to quantum dots : optical evidences and ultrafast photonics applicationsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.Centre for Biophotonicsen
dc.contributor.institutionUniversity of St Andrews.Office of the Principalen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.description.statusPeer revieweden

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