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dc.contributor.authorLee, Sin-Hyung
dc.contributor.authorPark, Hea-Lim
dc.contributor.authorKeum, Chang-Min
dc.contributor.authorLee, In-Ho
dc.contributor.authorKim, Min-Hoi
dc.contributor.authorLee, Sin-Doo
dc.date.accessioned2020-02-27T00:32:09Z
dc.date.available2020-02-27T00:32:09Z
dc.date.issued2019-02-27
dc.identifier.citationLee , S-H , Park , H-L , Keum , C-M , Lee , I-H , Kim , M-H & Lee , S-D 2019 , ' Organic flexible memristor with reduced operating voltage and high stability by interfacial control of conductive filament growth ' , Physica Status Solidi - Rapid Research Letters , vol. Early View , 1900044 . https://doi.org/10.1002/pssr.201900044en
dc.identifier.issn1862-6254
dc.identifier.otherPURE: 258254710
dc.identifier.otherPURE UUID: 7f65d202-c3bf-4522-b04f-5d6cdb21951f
dc.identifier.otherRIS: urn:513AC878657B730EB72317A6B28281D5
dc.identifier.otherScopus: 85062359812
dc.identifier.otherWOS: 000471066600003
dc.identifier.urihttp://hdl.handle.net/10023/19541
dc.descriptionThis work was supported in part through the BK21 Program funded by Ministry of Education of Korea.en
dc.description.abstractHerein, the underlying mechanisms for the growth of conductive filaments (CFs) at a metal–polymer electrolyte interface through ion migration in organic electrochemical metallization (ECM) memristor are presented. It is observed that the free volume of voids (nanopores) in the polymer electrolyte serves as the pathways of metal‐cations whereas the interfacial topography between an active electrode and a polymer electrolyte determines the nucleation sites of the CFs. The growth kinetics of the CFs and the resultant resistive memory are found to vary with the molecular weight of the polymer electrolyte and the metal protrusions at the interface. Our direct observations show that the free volume of voids of the polymer electrolyte, varied with the molecular weight, dictates the ion transport for the growth and the disruption of the CFs. Our organic ECM‐based memristor with a hetero‐electrolyte exhibits high mechanical flexibility, low switching voltages reduced by about three times compared to those of conventional devices, and stable memory retention for longer than 104 s under repeated cycles of bending.
dc.format.extent8
dc.language.isoeng
dc.relation.ispartofPhysica Status Solidi - Rapid Research Lettersen
dc.rights© 2019, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This work has been made available online in accordance with the publisher's policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1002/pssr.201900044en
dc.subjectConductive filament growthen
dc.subjectElectrochemical metallizationen
dc.subjectIon migrationen
dc.subjectOrganic memristorsen
dc.subjectPolymer electrolytesen
dc.subjectResistive switchingen
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleOrganic flexible memristor with reduced operating voltage and high stability by interfacial control of conductive filament growthen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1002/pssr.201900044
dc.description.statusPeer revieweden
dc.date.embargoedUntil2020-02-27


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