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dc.contributor.authorSchmidt, D.
dc.contributor.authorBerger, B.
dc.contributor.authorKahlert, M.
dc.contributor.authorBayer, M.
dc.contributor.authorSchneider, C.
dc.contributor.authorHöfling, Sven
dc.contributor.authorSedov, E. S.
dc.contributor.authorKavokin, A. V.
dc.contributor.authorAßmann, M.
dc.date.accessioned2019-01-18T16:30:07Z
dc.date.available2019-01-18T16:30:07Z
dc.date.issued2019-02-01
dc.identifier.citationSchmidt , D , Berger , B , Kahlert , M , Bayer , M , Schneider , C , Höfling , S , Sedov , E S , Kavokin , A V & Aßmann , M 2019 , ' Tracking dark excitons with exciton polaritons in semiconductor microcavities ' , Physical Review Letters , vol. 122 , no. 4 , 047403 . https://doi.org/10.1103/PhysRevLett.122.047403en
dc.identifier.issn0031-9007
dc.identifier.otherPURE: 257318441
dc.identifier.otherPURE UUID: 471ded2c-164f-46eb-888d-b66ccb27db4f
dc.identifier.otherScopus: 85060998083
dc.identifier.otherWOS: 000457706700030
dc.identifier.urihttp://hdl.handle.net/10023/16902
dc.description.abstractDark excitons are of fundamental importance for a wide variety of processes in semiconductors but are difficult to investigate using optical techniques due to their weak interaction with light fields. We reveal and characterize dark excitons nonresonantly injected into a semiconductor microcavity structure containing InGaAs/GaAs quantum wells by a gated train of eight 100 fs pulses separated by 13 ns by monitoring their interactions with the bright lower polariton mode. We find a surprisingly long dark exciton lifetime of more than 20 ns, which is longer than the time delay between two consecutive pulses. This creates a memory effect that we clearly observe through the variation of the time-resolved transmission signal. We propose a rate equation model that provides a quantitative agreement with the experimental data.
dc.format.extent6
dc.language.isoeng
dc.relation.ispartofPhysical Review Lettersen
dc.rights© 2019, American Physical Society. This work has been made available online in accordance with the publisher's policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1103/PhysRevLett.122.047403en
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleTracking dark excitons with exciton polaritons in semiconductor microcavitiesen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.122.047403
dc.description.statusPeer revieweden


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