Tracking dark excitons with exciton polaritons in semiconductor microcavities
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Dark excitons are of fundamental importance for a wide variety of processes in semiconductors but are difficult to investigate using optical techniques due to their weak interaction with light fields. We reveal and characterize dark excitons nonresonantly injected into a semiconductor microcavity structure containing InGaAs/GaAs quantum wells by a gated train of eight 100 fs pulses separated by 13 ns by monitoring their interactions with the bright lower polariton mode. We find a surprisingly long dark exciton lifetime of more than 20 ns, which is longer than the time delay between two consecutive pulses. This creates a memory effect that we clearly observe through the variation of the time-resolved transmission signal. We propose a rate equation model that provides a quantitative agreement with the experimental data.
Schmidt , D , Berger , B , Kahlert , M , Bayer , M , Schneider , C , Höfling , S , Sedov , E S , Kavokin , A V & Aßmann , M 2019 , ' Tracking dark excitons with exciton polaritons in semiconductor microcavities ' Physical Review Letters , vol. 122 , no. 4 , 047403 . DOI: 10.1103/PhysRevLett.122.047403
Physical Review Letters
© 2019, American Physical Society. This work has been made available online in accordance with the publisher's policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1103/PhysRevLett.122.047403
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