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dc.contributor.authorWinkler, K
dc.contributor.authorGregersen, N
dc.contributor.authorHäyrynen, T
dc.contributor.authorBradel, B
dc.contributor.authorSchade, A
dc.contributor.authorEmmerling, M
dc.contributor.authorKamp, M
dc.contributor.authorHöfling, Sven
dc.contributor.authorSchneider, C
dc.identifier.citationWinkler , K , Gregersen , N , Häyrynen , T , Bradel , B , Schade , A , Emmerling , M , Kamp , M , Höfling , S & Schneider , C 2018 , ' High quality factor GaAs microcavity with buried bullseye defects ' , Physical Review Materials , vol. 2 , no. 5 , 05220(R) .
dc.identifier.otherPURE: 252944952
dc.identifier.otherPURE UUID: 6766a081-8501-4566-9ef3-9e14410e1aad
dc.identifier.otherScopus: 85059629571
dc.identifier.otherWOS: 000433037500001
dc.descriptionThe authors acknowledge financial support from the State of Bavaria, as well as from the DFG within the Project Schn1376/3.1: Polariton based single-photon sources, and from the Danish Research Council for Technology and Production (Sapere Aude LOQIT, DFF4005-00370).en
dc.description.abstractThe development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with sub wavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement.
dc.relation.ispartofPhysical Review Materialsen
dc.rights© 2018, American Physical Society. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.titleHigh quality factor GaAs microcavity with buried bullseye defectsen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.description.statusPeer revieweden

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