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High quality factor GaAs microcavity with buried bullseye defects
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dc.contributor.author | Winkler, K | |
dc.contributor.author | Gregersen, N | |
dc.contributor.author | Häyrynen, T | |
dc.contributor.author | Bradel, B | |
dc.contributor.author | Schade, A | |
dc.contributor.author | Emmerling, M | |
dc.contributor.author | Kamp, M | |
dc.contributor.author | Höfling, Sven | |
dc.contributor.author | Schneider, C | |
dc.date.accessioned | 2018-05-31T16:30:05Z | |
dc.date.available | 2018-05-31T16:30:05Z | |
dc.date.issued | 2018-05 | |
dc.identifier | 252944952 | |
dc.identifier | 6766a081-8501-4566-9ef3-9e14410e1aad | |
dc.identifier | 85059629571 | |
dc.identifier | 000433037500001 | |
dc.identifier.citation | Winkler , K , Gregersen , N , Häyrynen , T , Bradel , B , Schade , A , Emmerling , M , Kamp , M , Höfling , S & Schneider , C 2018 , ' High quality factor GaAs microcavity with buried bullseye defects ' , Physical Review Materials , vol. 2 , no. 5 , 05220(R) . https://doi.org/10.1103/PhysRevMaterials.2.052201 | en |
dc.identifier.issn | 2475-9953 | |
dc.identifier.uri | https://hdl.handle.net/10023/13649 | |
dc.description | The authors acknowledge financial support from the State of Bavaria, as well as from the DFG within the Project Schn1376/3.1: Polariton based single-photon sources, and from the Danish Research Council for Technology and Production (Sapere Aude LOQIT, DFF4005-00370). | en |
dc.description.abstract | The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with sub wavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement. | |
dc.format.extent | 1245193 | |
dc.language.iso | eng | |
dc.relation.ispartof | Physical Review Materials | en |
dc.subject | QC Physics | en |
dc.subject | TK Electrical engineering. Electronics Nuclear engineering | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.subject.lcc | TK | en |
dc.title | High quality factor GaAs microcavity with buried bullseye defects | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1103/PhysRevMaterials.2.052201 | |
dc.description.status | Peer reviewed | en |
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