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dc.contributor.authorGagou, Y.
dc.contributor.authorBelhadi, J.
dc.contributor.authorAsbani, B.
dc.contributor.authorEl Marssi, M.
dc.contributor.authorDellis, J-L
dc.contributor.authorYuzyuk, Yu. I.
dc.contributor.authorRaevski, I. P.
dc.contributor.authorScott, J. F
dc.date.accessioned2018-03-03T00:33:15Z
dc.date.available2018-03-03T00:33:15Z
dc.date.issued2017-05-15
dc.identifier.citationGagou , Y , Belhadi , J , Asbani , B , El Marssi , M , Dellis , J-L , Yuzyuk , Y I , Raevski , I P & Scott , J F 2017 , ' Intrinsic dead layer effects in relaxed epitaxial BaTiO 3 thin film grown by pulsed laser deposition ' , Materials & Design , vol. 122 , pp. 157-163 . https://doi.org/10.1016/j.matdes.2017.03.001en
dc.identifier.issn0264-1275
dc.identifier.otherPURE: 249288663
dc.identifier.otherPURE UUID: 0a50f157-4ce8-4da1-8abd-76c2376ae229
dc.identifier.otherRIS: urn:BABCCB70EBAC2F27270B12B325BC9FEE
dc.identifier.otherScopus: 85014961309
dc.identifier.otherWOS: 000400213200014
dc.identifier.urihttp://hdl.handle.net/10023/12843
dc.descriptionMEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and Science of the Russian Federation (research project 3.1649.2017/PP).en
dc.description.abstractEpitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects.
dc.language.isoeng
dc.relation.ispartofMaterials & Designen
dc.rights© 2017 Elsevier Ltd. All rights reserved. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1016/j.matdes.2017.03.001en
dc.subjectDead layeren
dc.subjectFerroelectricen
dc.subjectBaTiO3en
dc.subjectEpitaxial growthen
dc.subjectPulsed laser depositionen
dc.subjectQC Physicsen
dc.subjectNDASen
dc.subject.lccQCen
dc.titleIntrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser depositionen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.School of Chemistryen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1016/j.matdes.2017.03.001
dc.description.statusPeer revieweden
dc.date.embargoedUntil2018-03-02


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