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Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition
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dc.contributor.author | Gagou, Y. | |
dc.contributor.author | Belhadi, J. | |
dc.contributor.author | Asbani, B. | |
dc.contributor.author | El Marssi, M. | |
dc.contributor.author | Dellis, J-L | |
dc.contributor.author | Yuzyuk, Yu. I. | |
dc.contributor.author | Raevski, I. P. | |
dc.contributor.author | Scott, J. F | |
dc.date.accessioned | 2018-03-03T00:33:15Z | |
dc.date.available | 2018-03-03T00:33:15Z | |
dc.date.issued | 2017-05-15 | |
dc.identifier | 249288663 | |
dc.identifier | 0a50f157-4ce8-4da1-8abd-76c2376ae229 | |
dc.identifier | 85014961309 | |
dc.identifier | 000400213200014 | |
dc.identifier.citation | Gagou , Y , Belhadi , J , Asbani , B , El Marssi , M , Dellis , J-L , Yuzyuk , Y I , Raevski , I P & Scott , J F 2017 , ' Intrinsic dead layer effects in relaxed epitaxial BaTiO 3 thin film grown by pulsed laser deposition ' , Materials & Design , vol. 122 , pp. 157-163 . https://doi.org/10.1016/j.matdes.2017.03.001 | en |
dc.identifier.issn | 0264-1275 | |
dc.identifier.other | RIS: urn:BABCCB70EBAC2F27270B12B325BC9FEE | |
dc.identifier.uri | https://hdl.handle.net/10023/12843 | |
dc.description | MEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and Science of the Russian Federation (research project 3.1649.2017/PP). | en |
dc.description.abstract | Epitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects. | |
dc.format.extent | 2090936 | |
dc.language.iso | eng | |
dc.relation.ispartof | Materials & Design | en |
dc.subject | Dead layer | en |
dc.subject | Ferroelectric | en |
dc.subject | BaTiO3 | en |
dc.subject | Epitaxial growth | en |
dc.subject | Pulsed laser deposition | en |
dc.subject | QC Physics | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Chemistry | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.1016/j.matdes.2017.03.001 | |
dc.description.status | Peer reviewed | en |
dc.date.embargoedUntil | 2018-03-02 |
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