Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition
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Epitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects.
Gagou , Y , Belhadi , J , Asbani , B , El Marssi , M , Dellis , J-L , Yuzyuk , Y I , Raevski , I P & Scott , J F 2017 , ' Intrinsic dead layer effects in relaxed epitaxial BaTiO 3 thin film grown by pulsed laser deposition ' Materials & Design , vol. 122 , pp. 157-163 . DOI: 10.1016/j.matdes.2017.03.001
Materials & Design
© 2017 Elsevier Ltd. All rights reserved. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1016/j.matdes.2017.03.001
DescriptionMEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and Science of the Russian Federation (research project 3.1649.2017/PP).
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