Intrinsic dead layer effects in relaxed epitaxial BaTiO3 thin film grown by pulsed laser deposition
Abstract
Epitaxial BaTiO3 (BT) thin film of about 400 nm thickness was grown on LaSr0.5Co0.5O3 (LSCO) coated (001)MgO using pulsed laser deposition. Ferroelectric properties of the BT thin film in Pt/BT/LSCO/MgO heterostructure capacitor configuration were investigated. Dynamic P-E hysteresis loops at room temperature showed ferroelectric behavior with Ps = 32 μC/cm2, Pr = 14 μC/cm2 and EC = 65 kV/cm. Static C-V measurements confirmed reversible switching with a coercive field EC = 15 kV/cm. Basing on a model taking into account an interface dead-layer we show that the capacitance-voltage “butterfly” loops imply only 25% switching of dipoles that inferred from dynamic polarization-field loops (~ 4 and ~ 16 kV/cm, respectively). Dielectric permittivity as a function of temperature revealed a first-order ferroelectric-to-paraelectric (FE-PE) phase transition in the BT film characterized by a maximum at TC ~ 130 °C. The very large (~ 126 K at 1 kHz) difference between TC and the extrapolated Curie-Weiss temperature T0 is attributed to the dead-layer effects.
Citation
Gagou , Y , Belhadi , J , Asbani , B , El Marssi , M , Dellis , J-L , Yuzyuk , Y I , Raevski , I P & Scott , J F 2017 , ' Intrinsic dead layer effects in relaxed epitaxial BaTiO 3 thin film grown by pulsed laser deposition ' Materials & Design , vol. 122 , pp. 157-163 . DOI: 10.1016/j.matdes.2017.03.001
Publication
Materials & Design
Status
Peer reviewed
ISSN
0264-1275Type
Journal article
Rights
© 2017 Elsevier Ltd. All rights reserved. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1016/j.matdes.2017.03.001
Description
MEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and Science of the Russian Federation (research project 3.1649.2017/PP).Items in the St Andrews Research Repository are protected by copyright, with all rights reserved, unless otherwise indicated.