Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers
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Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 µm. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.
Dyksik , M , Motyka , M , Kurka , M , Ryczko , K , Misiewicz , J , Schade , A , Kamp , M , Höfling , S & Sęk , G 2017 , ' Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers ' Japanese Journal of Applied Physics , vol 56 , no. 11 , 110301 . DOI: 10.7567/JJAP.56.110301
Japanese Journal of Applied Physics
© 2017 The Japan Society of Applied Physics. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
This project has received funding from the European Commission's Horizon 2020 Research and Innovation Programme iCspec under grant agreement No. 636930 and has also been supported by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.
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