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Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime
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dc.contributor.author | Plank, H. | |
dc.contributor.author | Tarasenko, S. A. | |
dc.contributor.author | Hummel, T. | |
dc.contributor.author | Knebl, G. | |
dc.contributor.author | Pfeffer, P. | |
dc.contributor.author | Kamp, M. | |
dc.contributor.author | Höfling, S. | |
dc.contributor.author | Ganichev, S. D. | |
dc.date.accessioned | 2017-09-01T23:32:30Z | |
dc.date.available | 2017-09-01T23:32:30Z | |
dc.date.issued | 2017-01 | |
dc.identifier | 245527539 | |
dc.identifier | d0e7799a-b8a1-4250-a869-5fab4ad4db1a | |
dc.identifier | 84986309346 | |
dc.identifier | 000390625300029 | |
dc.identifier.citation | Plank , H , Tarasenko , S A , Hummel , T , Knebl , G , Pfeffer , P , Kamp , M , Höfling , S & Ganichev , S D 2017 , ' Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime ' , Physica E: Low-dimensional Systems and Nanostructures , vol. 85 , pp. 193-198 . https://doi.org/10.1016/j.physe.2016.08.036 | en |
dc.identifier.issn | 1386-9477 | |
dc.identifier.other | RIS: urn:55E61A2EAB8884B0785BA284A03B1402 | |
dc.identifier.uri | https://hdl.handle.net/10023/11598 | |
dc.description | The work was supported by the Elite Network of Bavaria (K-NW-2013-247), the DFG priority program SPP1666, the Volkswagen Stiftung Program, the State of Bavaria and the German Research Foundation (Ka2318/4-1). S.A.T. acknowledges support from the RFBR (projects 14-22-02102 and 16-02-00375). | en |
dc.description.abstract | We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings. | |
dc.format.extent | 638945 | |
dc.language.iso | eng | |
dc.relation.ispartof | Physica E: Low-dimensional Systems and Nanostructures | en |
dc.subject | QC Physics | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.1016/j.physe.2016.08.036 | |
dc.description.status | Peer reviewed | en |
dc.date.embargoedUntil | 2017-09-01 |
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