Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime
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We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consists of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings.
Plank , H , Tarasenko , S A , Hummel , T , Knebl , G , Pfeffer , P , Kamp , M , Höfling , S & Ganichev , S D 2017 , ' Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime ' Physica E: Low-dimensional Systems and Nanostructures , vol 85 , pp. 193-198 . DOI: 10.1016/j.physe.2016.08.036
Physica E: Low-dimensional Systems and Nanostructures
© 2016, Elsevier. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at www.sciencedirect.com / https://dx.doi.org/10.1016/j.physe.2016.08.036
DescriptionThe work was supported by the Elite Network of Bavaria (K-NW-2013-247), the DFG priority program SPP1666, the Volkswagen Stiftung Program, the State of Bavaria and the German Research Foundation (Ka2318/4-1). S.A.T. acknowledges support from the RFBR (projects 14-22-02102 and 16-02-00375).
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