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Narrow-band anisotropic electronic structure of ReS2
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dc.contributor.author | Biswas, D. | |
dc.contributor.author | Ganose, Alex M. | |
dc.contributor.author | Yano, R. | |
dc.contributor.author | Riley, J. M. | |
dc.contributor.author | Bawden, L. | |
dc.contributor.author | Clark, O. J. | |
dc.contributor.author | Feng, J. | |
dc.contributor.author | Collins-Mcintyre, L. | |
dc.contributor.author | Sajjad, M. T. | |
dc.contributor.author | Meevasana, W. | |
dc.contributor.author | Kim, T. K. | |
dc.contributor.author | Hoesch, M. | |
dc.contributor.author | Rault, J. E. | |
dc.contributor.author | Sasagawa, T. | |
dc.contributor.author | Scanlon, David O. | |
dc.contributor.author | King, P. D. C. | |
dc.date.accessioned | 2017-08-17T09:30:08Z | |
dc.date.available | 2017-08-17T09:30:08Z | |
dc.date.issued | 2017-08-16 | |
dc.identifier | 250288709 | |
dc.identifier | f586ded4-8aee-46ca-b3bd-e55970b851b7 | |
dc.identifier | 85029693222 | |
dc.identifier | 000407713600004 | |
dc.identifier.citation | Biswas , D , Ganose , A M , Yano , R , Riley , J M , Bawden , L , Clark , O J , Feng , J , Collins-Mcintyre , L , Sajjad , M T , Meevasana , W , Kim , T K , Hoesch , M , Rault , J E , Sasagawa , T , Scanlon , D O & King , P D C 2017 , ' Narrow-band anisotropic electronic structure of ReS 2 ' , Physical Review. B, Condensed matter and materials physics , vol. 96 , no. 8 , 085205 . https://doi.org/10.1103/PhysRevB.96.085205 | en |
dc.identifier.issn | 1098-0121 | |
dc.identifier.other | ArXiv: http://arxiv.org/abs/1703.04725v1 | |
dc.identifier.uri | https://hdl.handle.net/10023/11496 | |
dc.description.abstract | We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along kz. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer. | |
dc.format.extent | 8031992 | |
dc.language.iso | eng | |
dc.relation.ispartof | Physical Review. B, Condensed matter and materials physics | en |
dc.subject | QC Physics | en |
dc.subject | TK Electrical engineering. Electronics Nuclear engineering | en |
dc.subject | DAS | en |
dc.subject.lcc | QC | en |
dc.subject.lcc | TK | en |
dc.title | Narrow-band anisotropic electronic structure of ReS2 | en |
dc.type | Journal article | en |
dc.contributor.sponsor | EPSRC | en |
dc.contributor.sponsor | EPSRC | en |
dc.contributor.sponsor | The Royal Society | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. University of St Andrews | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1103/PhysRevB.96.085205 | |
dc.description.status | Peer reviewed | en |
dc.date.embargoedUntil | 2017-08-16 | |
dc.identifier.grantnumber | EP/I031014/1 | en |
dc.identifier.grantnumber | EP/M023427/1 | en |
dc.identifier.grantnumber | UF120096 | en |
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