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dc.contributor.authorBiswas, D.
dc.contributor.authorGanose, Alex M.
dc.contributor.authorYano, R.
dc.contributor.authorRiley, J. M.
dc.contributor.authorBawden, L.
dc.contributor.authorClark, O. J.
dc.contributor.authorFeng, J.
dc.contributor.authorCollins-Mcintyre, L.
dc.contributor.authorSajjad, M. T.
dc.contributor.authorMeevasana, W.
dc.contributor.authorKim, T. K.
dc.contributor.authorHoesch, M.
dc.contributor.authorRault, J. E.
dc.contributor.authorSasagawa, T.
dc.contributor.authorScanlon, David O.
dc.contributor.authorKing, P. D. C.
dc.date.accessioned2017-08-17T09:30:08Z
dc.date.available2017-08-17T09:30:08Z
dc.date.issued2017-08-16
dc.identifier.citationBiswas , D , Ganose , A M , Yano , R , Riley , J M , Bawden , L , Clark , O J , Feng , J , Collins-Mcintyre , L , Sajjad , M T , Meevasana , W , Kim , T K , Hoesch , M , Rault , J E , Sasagawa , T , Scanlon , D O & King , P D C 2017 , ' Narrow-band anisotropic electronic structure of ReS 2 ' , Physical Review. B, Condensed matter and materials physics , vol. 96 , no. 8 , 085205 . https://doi.org/10.1103/PhysRevB.96.085205en
dc.identifier.issn1098-0121
dc.identifier.otherPURE: 250288709
dc.identifier.otherPURE UUID: f586ded4-8aee-46ca-b3bd-e55970b851b7
dc.identifier.otherArXiv: http://arxiv.org/abs/1703.04725v1
dc.identifier.otherScopus: 85029693222
dc.identifier.otherWOS: 000407713600004
dc.identifier.urihttps://hdl.handle.net/10023/11496
dc.description.abstractWe have used angle resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along kz. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.
dc.language.isoeng
dc.relation.ispartofPhysical Review. B, Condensed matter and materials physicsen
dc.rights© 2017 American Physical Society. This work has been made available online in accordance with the publisher’s policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at journals.aps.org / https://doi.org/10.1103/PhysRevB.96.085205en
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleNarrow-band anisotropic electronic structure of ReS2en
dc.typeJournal articleen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorThe Royal Societyen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. University of St Andrewsen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.96.085205
dc.description.statusPeer revieweden
dc.date.embargoedUntil2017-08-16
dc.identifier.grantnumberEP/I031014/1en
dc.identifier.grantnumberEP/M023427/1en
dc.identifier.grantnumberUF120096en


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