Narrow-band anisotropic electronic structure of ReS2
Abstract
We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along kz. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.
Citation
Biswas , D , Ganose , A M , Yano , R , Riley , J M , Bawden , L , Clark , O J , Feng , J , Collins-Mcintyre , L , Sajjad , M T , Meevasana , W , Kim , T K , Hoesch , M , Rault , J E , Sasagawa , T , Scanlon , D O & King , P D C 2017 , ' Narrow-band anisotropic electronic structure of ReS 2 ' , Physical Review. B, Condensed matter and materials physics , vol. 96 , no. 8 , 085205 . https://doi.org/10.1103/PhysRevB.96.085205
Publication
Physical Review. B, Condensed matter and materials physics
Status
Peer reviewed
ISSN
1098-0121Type
Journal article
Collections
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