Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

Abstract

Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170—200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13—15 meV.