Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
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Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170—200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the low-energy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13—15 meV.
Dyksik , M , Motyka , M , Weih , R , Höfling , S , Kamp , M , Sęk , G & Misiewicz , J 2017 , ' Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells ' Optical and Quantum Electronics , vol 49 , no. 2 , 59 . DOI: 10.1007/s11082-017-0891-0
Optical and Quantum Electronics
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The work has been supported from iCspec project, which received funding from the European Commission’s Horizon 2020 Research and Innovation Programme under grant agreement No. 636930, and also by the National Science Centre of Poland within Grant No. 2014/15/B/ST7/04663.
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