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dc.contributor.authorDemenev, A. A.
dc.contributor.authorKulakovskii, V. D.
dc.contributor.authorSchneider, C.
dc.contributor.authorBrodbeck, S.
dc.contributor.authorKamp, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorLobanov, S. V.
dc.contributor.authorWeiss, T.
dc.contributor.authorGippius, N. A.
dc.contributor.authorTikhodeev, S. G.
dc.date.accessioned2017-01-05T15:30:09Z
dc.date.available2017-01-05T15:30:09Z
dc.date.issued2016-10-24
dc.identifier.citationDemenev , A A , Kulakovskii , V D , Schneider , C , Brodbeck , S , Kamp , M , Höfling , S , Lobanov , S V , Weiss , T , Gippius , N A & Tikhodeev , S G 2016 , ' Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells ' , Applied Physics Letters , vol. 109 , no. 17 , 171106 . https://doi.org/10.1063/1.4966279en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 247933739
dc.identifier.otherPURE UUID: 0028cacc-8278-4ca2-ae94-c876419fef7e
dc.identifier.otherScopus: 84994276035
dc.identifier.otherWOS: 000387258300006
dc.identifier.urihttps://hdl.handle.net/10023/10049
dc.descriptionThis work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria.en
dc.description.abstractWe report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
dc.format.extent5
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2016, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at aip.scitation.org / http://dx.doi.org/10.1063/1.4966279en
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectPhysics and Astronomy (miscellaneous)en
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleCircularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wellsen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4966279
dc.description.statusPeer revieweden


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