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dc.contributor.authorDemenev, A. A.
dc.contributor.authorKulakovskii, V. D.
dc.contributor.authorSchneider, C.
dc.contributor.authorBrodbeck, S.
dc.contributor.authorKamp, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorLobanov, S. V.
dc.contributor.authorWeiss, T.
dc.contributor.authorGippius, N. A.
dc.contributor.authorTikhodeev, S. G.
dc.date.accessioned2017-01-05T15:30:09Z
dc.date.available2017-01-05T15:30:09Z
dc.date.issued2016-10-24
dc.identifier247933739
dc.identifier0028cacc-8278-4ca2-ae94-c876419fef7e
dc.identifier84994276035
dc.identifier000387258300006
dc.identifier.citationDemenev , A A , Kulakovskii , V D , Schneider , C , Brodbeck , S , Kamp , M , Höfling , S , Lobanov , S V , Weiss , T , Gippius , N A & Tikhodeev , S G 2016 , ' Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells ' , Applied Physics Letters , vol. 109 , no. 17 , 171106 . https://doi.org/10.1063/1.4966279en
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/10023/10049
dc.descriptionThis work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria.en
dc.description.abstractWe report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
dc.format.extent5
dc.format.extent702084
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectPhysics and Astronomy (miscellaneous)en
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleCircularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wellsen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1063/1.4966279
dc.description.statusPeer revieweden


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