Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells
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We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
Demenev , A A , Kulakovskii , V D , Schneider , C , Brodbeck , S , Kamp , M , Höfling , S , Lobanov , S V , Weiss , T , Gippius , N A & Tikhodeev , S G 2016 , ' Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells ' Applied Physics Letters , vol 109 , no. 17 , 171106 . DOI: 10.1063/1.4966279
Applied Physics Letters
© 2016, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at aip.scitation.org / http://dx.doi.org/10.1063/1.4966279
This work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria.
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