Electro-optic modulation in bulk silicon using surface plasmon resonance
Date
01/01/2016Funder
Grant ID
EP/F001622/1
Keywords
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Abstract
We propose and present simulated results for a new design of an optical modulator based on Surface Plasmon Polariton (SPP) resonance. The modulator is realized on a bulk silicon substrate, thus offering an opportunity for front-end integration with electronic circuits. The device consists of a dielectric waveguide evanescently coupled to a SPP mode at the interface between bulk silicon and metal. By using SPP resonance we achieved an ultra-high spectral sensitivity (∼5000 nm/refractive index unit) with large modulation bandwidth (90 nm). For a refractive index change of 0.02, we achieved 100 nm shift in resonance wavelength and a modulation depth of ∼10 dB.
Citation
Debnath , K , Damas , P & O'Faolain , L 2016 , ' Electro-optic modulation in bulk silicon using surface plasmon resonance ' , Photonics and Nanostructures : Fundamentals and Applications , vol. 18 , pp. 31-35 . https://doi.org/10.1016/j.photonics.2015.11.002
Publication
Photonics and Nanostructures : Fundamentals and Applications
Status
Peer reviewed
ISSN
1569-4410Type
Journal article
Rights
Copyright © 2016 Elsevier B.V. All rights reserved.This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://dx.doi.org/10.1016/j.photonics.2015.11.002
Description
The authors acknowledge funding from the EPSRC in the UK under the UK Silicon Photonics project.Collections
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