Bulk AlInAs on InP(111) as a novel material system for pure single photon emission
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In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al0:48In0:52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k•p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 meV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g(2)-values as low as g(2)/cw (0) = 0:05+0:17/-0:05 for continuous wave (cw) excitation and g (2) pulsed, corr. = 0:24 ± 0:02 for pulsed excitation.
Unsleber , S , Deppisch , M , Krammel , C M , Vo , M , Yerino , C D , Simmonds , P J , Lee , M L , Koenraad , P M , Schneider , C & Hoefling , S 2016 , ' Bulk AlInAs on InP(111) as a novel material system for pure single photon emission ' Optics Express , vol 24 , no. 20 , pp. 23198-23206 . DOI: 10.1364/OE.24.023198
© 2016, Optical Society of America. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at www.osapublishing.org / https://dx.doi.org/10.1364/OE.24.023198
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