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Observation of ultrafast free carrier dynamics in single layer MoS2

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dc.contributor.authorCabo, Antonija
dc.contributor.authorMiwa, Jill
dc.contributor.authorGrønborg, Signe
dc.contributor.authorRiley, Jonathon Mark
dc.contributor.authorJohannsen, Jens
dc.contributor.authorCacho, Cephise
dc.contributor.authorAlexander, Oliver
dc.contributor.authorChapman, Richard
dc.contributor.authorSpringate, Emma
dc.contributor.authorGrioni, Marco
dc.contributor.authorLauritsen, Jeppe
dc.contributor.authorKing, Phil
dc.contributor.authorHofmann, Philip
dc.contributor.authorUlstrup, Søren
dc.date.accessioned2016-08-19T23:34:52Z
dc.date.available2016-08-19T23:34:52Z
dc.date.issued2015-09-09
dc.identifier210997083
dc.identifiere36ac7cd-38a0-4099-b1f7-d5def6cc49c7
dc.identifier000361252700033
dc.identifier84941039820
dc.identifier.citationCabo , A , Miwa , J , Grønborg , S , Riley , J M , Johannsen , J , Cacho , C , Alexander , O , Chapman , R , Springate , E , Grioni , M , Lauritsen , J , King , P , Hofmann , P & Ulstrup , S 2015 , ' Observation of ultrafast free carrier dynamics in single layer MoS 2 ' , Nano Letters , vol. 15 , no. 9 , pp. 5883–5887 . https://doi.org/10.1021/acs.nanolett.5b01967en
dc.identifier.issn1530-6984
dc.identifier.urihttps://hdl.handle.net/10023/9344
dc.descriptionThe authors gratefully acknowledge funding from the VILLUM foundation, the Lundbeck foundation, Haldor Topsøe A/S, the Danish Strategic Research Council (CAT-C), EPSRC (Grant Nos. EP/I031014/1 and EP/L505079/1), The Royal Society, and the Swiss National Science Foundation (NSF). Ph.H. and S.U. acknowledge financial support from the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant Nos. DFF-4002-00029 and DFF-4090-00125). Date of Accepted 19/08/2015en
dc.description.abstractThe dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for an SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
dc.format.extent730179
dc.language.isoeng
dc.relation.ispartofNano Lettersen
dc.subjectTransition metal dichalcogenidesen
dc.subjectMoS2en
dc.subjectFree carriersen
dc.subjectExitonsen
dc.subjectTime- and angle-resolved photoemission spectroscopyen
dc.subjectQC Physicsen
dc.subjectDASen
dc.subject.lccQCen
dc.titleObservation of ultrafast free carrier dynamics in single layer MoS2en
dc.typeJournal itemen
dc.contributor.sponsorThe Royal Societyen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorBBSRCen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1021/acs.nanolett.5b01967
dc.description.statusPeer revieweden
dc.date.embargoedUntil2016-08-19
dc.identifier.grantnumberUF120096en
dc.identifier.grantnumberEP/I031014/1en
dc.identifier.grantnumberBB/J019054/1en


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