Carrier-density control of the SrTiO3 (001) surface 2DEG studied by ARPES

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Date

2015

Abstract

The origin of the 2D electron gas (2DEG)stabilized at the bare surface of SrTiO3 (001) is investigated. Using high-resolution angle-resolved photoemission and core-level spectroscopy, it is shown conclusively that this 2DEG arises from light-induced oxygen vacancies. The dominant mechanism driving vacancy formation is identified, allowing unprecedented control over the 2DEG carrier density.

Citation

McKeown Walker , S E , Bruno , F Y , Wang , Z , de la Torre , A , Riccó , S , Tamai , A , Kim , T , Hoesch , M , Shi , M , Bahramy , M S , King , P & Baumberger , F 2015 , ' Carrier-density control of the SrTiO 3 (001) surface 2DEG studied by ARPES ' Advanced Materials , vol 27 , no. 26 , 27 , pp. 3894-3899 . DOI: 10.1002/adma.201501556

Version

Postprint

Publication

Advanced Materials

Status

Peer reviewed

URI

http://hdl.handle.net/10023/8849
http://onlinelibrary.wiley.com/doi/10.1002/adma.201501556/full#footer-support-info

DOI

http://dx.doi.org/10.1002/adma.201501556

ISSN

0935-9648

Type

Journal article

Rights

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Walker, S. M., Bruno, F. Y., Wang, Z., de la Torre, A., Riccó, S., Tamai, A., Kim, T. K., Hoesch, M., Shi, M., Bahramy, M. S., King, P. D. C. and Baumberger, F. (2015), Carrier-Density Control of the SrTiO3 (001) Surface 2D Electron Gas studied by ARPES. Adv. Mater., 27: 3894–3899, which has been published in final form at https://dx.doi.org/10.1002/adma.201501556. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.

Description

This work was supported by the Swiss National Science Foundation (200021-146995). P. D. C. K was supported by the UK-EPSRC (EP/I031014/1) and the Royal Society. M. S. B was supported by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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