Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K
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We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.
Dusanowski , Ł , Syperek , M , Misiewicz , J , Somers , A , Hoefling , S , Kamp , M , Reithmaier , J P & Sęk , G 2016 , ' Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K ' , Applied Physics Letters , vol. 108 , no. 16 , 163108 . https://doi.org/10.1063/1.4947448
Applied Physics Letters
© 2016, AIP Publishing. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at scitation.aip.orgCopyright © 2016, AIP Publishing. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work which was originally published at http://dx.doi.org/10.1063/1.4947448
DescriptionThis research was supported by the National Science Center of Poland within Grant No. 2011/02/A/ST3/00152.
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