Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K
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We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.
Dusanowski , Ł , Syperek , M , Misiewicz , J , Somers , A , Hoefling , S , Kamp , M , Reithmaier , J P & Sęk , G 2016 , ' Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K ' Applied Physics Letters , vol 108 , no. 16 , 163108 . DOI: 10.1063/1.4947448
Applied Physics Letters
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