Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
Date
07/03/2016Author
Metadata
Show full item recordAltmetrics Handle Statistics
Altmetrics DOI Statistics
Abstract
Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.
Citation
Motyka , M , Dyksik , M , Ryczko , K , Weih , R , Dallner , M , Höfling , S , Kamp , M , Sęk , G & Misiewicz , J 2016 , ' Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing ' , Applied Physics Letters , vol. 108 , no. 10 . https://doi.org/10.1063/1.4943193
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Rights
© 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Description
This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 636930. We would also like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.Collections
Items in the St Andrews Research Repository are protected by copyright, with all rights reserved, unless otherwise indicated.