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Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

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dc.contributor.authorKatiyar, Rajesh K.
dc.contributor.authorSharma, Yogesh
dc.contributor.authorDiestra, Danilo G. Barrionuevo
dc.contributor.authorMisra, Pankaj
dc.contributor.authorKooriyattil, Sudheendran
dc.contributor.authorPavunny, Shojan P.
dc.contributor.authorMorell, Gerardo
dc.contributor.authorWeiner, Brad R.
dc.contributor.authorScott, J. F.
dc.contributor.authorKatiyar, Ram S.
dc.date.accessioned2016-02-19T11:40:07Z
dc.date.available2016-02-19T11:40:07Z
dc.date.issued2015-03
dc.identifier223447618
dc.identifier71064f60-3a72-48fc-8c71-a2e850a1ec68
dc.identifier000352449500010
dc.identifier84924326384
dc.identifier.citationKatiyar , R K , Sharma , Y , Diestra , D G B , Misra , P , Kooriyattil , S , Pavunny , S P , Morell , G , Weiner , B R , Scott , J F & Katiyar , R S 2015 , ' Unipolar resistive switching in planar Pt/BiFeO3/Pt structure ' , AIP Advances , vol. 5 , no. 3 , 037109 . https://doi.org/10.1063/1.4914475en
dc.identifier.issn2158-3226
dc.identifier.urihttps://hdl.handle.net/10023/8267
dc.descriptionThis work was supported by the NASA EPSCoR Grant # NNX13AB22A. Financial support to various researchers from IFN-NSF grant # EPS 1002410 (RSK, DB, YS and BRW) is gratefully acknowledged. S. K. is thankful to UGC, India for a Raman fellowship under Indo-US 21st century knowledge initiatives (No:5-53/2013(I.C)).en
dc.description.abstractWe report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of similar to 10(4) and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of similar to 100 mW/cm(2). Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. (C) 2015 Author(s).
dc.format.extent6
dc.format.extent1865772
dc.language.isoeng
dc.relation.ispartofAIP Advancesen
dc.subjectBIFEO3 Ceramicsen
dc.subjectDevicesen
dc.subjectPolarizationen
dc.subjectQC Physicsen
dc.subjectNDASen
dc.subjectSDG 7 - Affordable and Clean Energyen
dc.subject.lccQCen
dc.titleUnipolar resistive switching in planar Pt/BiFeO3/Pt structureen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Chemistryen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.identifier.doi10.1063/1.4914475
dc.description.statusPeer revieweden


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