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Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

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Pica_2016_PRB_SurfaceCode.pdf (1.195Mb)
Date
14/01/2016
Author
Pica, Giuseppe
Lovett, Brendon William
Bhatt, R. N.
Schenkel, T.
Lyon, S. A.
Keywords
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics
NDAS
BDC
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Abstract
A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighboring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on subnanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.
Citation
Pica , G , Lovett , B W , Bhatt , R N , Schenkel , T & Lyon , S A 2016 , ' Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings ' , Physical Review. B, Condensed matter and materials physics , vol. 93 , no. 3 , 035306 . https://doi.org/10.1103/PhysRevB.93.035306
Publication
Physical Review. B, Condensed matter and materials physics
Status
Peer reviewed
DOI
https://doi.org/10.1103/PhysRevB.93.035306
ISSN
1098-0121
Type
Journal article
Rights
© 2016 American Physical Society. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1103/PhysRevB.93.035306
Description
This research was funded by the joint EPSRC (EP/I035536)/ NSF (DMR-1107606) Materials World Network grant (GP, BWL, SAL), the EPSRC grant EP/K025562 (BWL), the NSF MRSEC grant DMR-01420541 (SAL), and the Department of Energy, Office of Basic Energy Sciences grant DE-SC0002140 (RNB) and the DOE Office of Science under Contract No. DE-AC02-05CH11231 (TS). G.P. thanks the University of St. Andrews and EPSRC for a Doctoral Prize Fellowship.
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  • University of St Andrews Research
URI
http://hdl.handle.net/10023/8197

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