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Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

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Hoefling_2014_AIPAdv_Temperature_CC.pdf (738.2Kb)
Date
19/09/2014
Author
Braun, T.
Schneider, C.
Maier, S.
Igusa, R.
Iwamoto, S.
Forchel, A.
Hoefling, S.
Arakawa, Y.
Kamp, M.
Keywords
GAAS
Metadata
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Abstract
In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.
Citation
Braun , T , Schneider , C , Maier , S , Igusa , R , Iwamoto , S , Forchel , A , Hoefling , S , Arakawa , Y & Kamp , M 2014 , ' Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots ' , AIP Advances , vol. 4 , no. 9 , 097128 . https://doi.org/10.1063/1.4896284
Publication
AIP Advances
Status
Peer reviewed
DOI
https://doi.org/10.1063/1.4896284
ISSN
2158-3226
Type
Journal article
Rights
© 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Description
The authors gratefully acknowledge funding by the state of Bavaria and the bilateral project of the Deutsche Forschungsgemeinschaft (DFG) and the Japan Science and Technology Agency (JST) (project ‘single quantum dot lasers’).
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  • University of St Andrews Research
URI
http://hdl.handle.net/10023/8177

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