Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
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In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.
Braun , T , Schneider , C , Maier , S , Igusa , R , Iwamoto , S , Forchel , A , Hoefling , S , Arakawa , Y & Kamp , M 2014 , ' Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots ' AIP Advances , vol 4 , no. 9 , 097128 . DOI: 10.1063/1.4896284
© 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
The authors gratefully acknowledge funding by the state of Bavaria and the bilateral project of the Deutsche Forschungsgemeinschaft (DFG) and the Japan Science and Technology Agency (JST) (project ‘single quantum dot lasers’).