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dc.contributor.authorHarrison, S. E.
dc.contributor.authorCollins-McIntyre, Liam James
dc.contributor.authorZhang, S. L.
dc.contributor.authorBaker, A. A.
dc.contributor.authorFigueroa, A. I.
dc.contributor.authorKellock, A. J.
dc.contributor.authorPushp, A.
dc.contributor.authorChen, Y. L.
dc.contributor.authorParkin, S. S. P.
dc.contributor.authorHarris, J. S.
dc.contributor.authorvan der Laan, G.
dc.contributor.authorHesjedal, T.
dc.date.accessioned2016-02-05T11:40:08Z
dc.date.available2016-02-05T11:40:08Z
dc.date.issued2015-11-02
dc.identifier.citationHarrison , S E , Collins-McIntyre , L J , Zhang , S L , Baker , A A , Figueroa , A I , Kellock , A J , Pushp , A , Chen , Y L , Parkin , S S P , Harris , J S , van der Laan , G & Hesjedal , T 2015 , ' Study of Ho-doped Bi 2 Te 3 topological insulator thin films ' , Applied Physics Letters , vol. 107 , no. 18 , 182406 . https://doi.org/10.1063/1.4935235en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 240276737
dc.identifier.otherPURE UUID: c4a3b8d7-3da8-48c6-a5f3-98359cb030b7
dc.identifier.otherScopus: 84946781569
dc.identifier.urihttps://hdl.handle.net/10023/8139
dc.descriptionThis publication arises from research funded by the John Fell Oxford University Press (OUP) Research Fund and the Research Complex at Harwell is acknowledged for their hospitality. This work was supported by a DARPA MESO project (No. N66001-11-1-4105). S.E.H. was supported by the VPGE (Stanford University). L.C.M. and A.A.B. acknowledge partial financial support from EPSRC (UK) through a Doctoral Training Award. Diamond Light Source is acknowledged for beamtime on I10 (proposal SI10207).en
dc.description.abstractBreaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.
dc.format.extent5
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en
dc.subjectQC Physicsen
dc.subjectPhysics and Astronomy (miscellaneous)en
dc.subjectNDASen
dc.subject.lccQCen
dc.titleStudy of Ho-doped Bi2Te3 topological insulator thin filmsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1063/1.4935235
dc.description.statusPeer revieweden


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