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dc.contributor.authorRibierre, Jean-Charles
dc.contributor.authorRuseckas, Arvydas
dc.contributor.authorStaton, Sarah V
dc.contributor.authorKnights, Kevin
dc.contributor.authorCumpstey, Neil
dc.contributor.authorBurn, Paul
dc.contributor.authorSamuel, Ifor David William
dc.date.accessioned2016-01-15T15:40:11Z
dc.date.available2016-01-15T15:40:11Z
dc.date.issued2016-02-07
dc.identifier239827903
dc.identifiere37af864-f73f-4060-a06f-114bb79be678
dc.identifier85000839113
dc.identifier000369508100025
dc.identifier.citationRibierre , J-C , Ruseckas , A , Staton , S V , Knights , K , Cumpstey , N , Burn , P & Samuel , I D W 2016 , ' Phosphorescence quenching of fac-tris(2-phenylpyridyl)iridium(III) complexes in thin films on dielectric surfaces ' , Physical Chemistry Chemical Physics , vol. 18 , no. 5 , pp. 3575-3580 . https://doi.org/10.1039/C5CP06584Den
dc.identifier.issn1463-9076
dc.identifier.otherBibtex: urn:135b608c37247d8093a02139ae52b615
dc.identifier.otherORCID: /0000-0001-9114-3522/work/32543058
dc.identifier.urihttps://hdl.handle.net/10023/8031
dc.description.abstractWe study the influence of the film thickness on the time-resolved phosphorescence and the luminescence quantum yield of fac-tris(2-phenylpyridyl)iridium(III) [Ir(ppy)3]-cored dendrimers deposited on dielectric substrates. A correlation is observed between the surface quenching velocity and the quenching rate by intermolecular interactions in the bulk film, which suggests that both processes are controlled by dipole-dipole interactions between Ir(ppy)3 complexes at the core of the dendrimers. It is also found that the surface quenching velocity decreases as the refractive index of the substrate is increased. This can be explained by partial screening of dipole-dipole interactions by the dielectric environment.
dc.format.extent1964041
dc.language.isoeng
dc.relation.ispartofPhysical Chemistry Chemical Physicsen
dc.subjectQC Physicsen
dc.subjectDASen
dc.subject.lccQCen
dc.titlePhosphorescence quenching of fac-tris(2-phenylpyridyl)iridium(III) complexes in thin films on dielectric surfacesen
dc.typeJournal articleen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorEuropean Research Councilen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1039/C5CP06584D
dc.description.statusPeer revieweden
dc.identifier.grantnumberGR/S82398/01en
dc.identifier.grantnumberN/Aen
dc.identifier.grantnumberen


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