Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong
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The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850' this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μ1-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.
Quan Jiang , A , Jian Meng , X , Wei Zhang , D , Hyuk Park , M , Yoo , S , Jin Kim , Y , Scott , J F & Seong Hwang , C 2015 , ' Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong ' , Scientific Reports , vol. 5 , 14618 . https://doi.org/10.1038/srep14618
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