Silicon photonic crystal thermal emitter at near-infrared wavelengths
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Controlling thermal emission with resonant photonic nanostructures has recently attracted much attention. Most of the work has concentrated on the mid-infrared wavelength range and/or was based on metallic nanostructures. Here, we demonstrate the experimental operation of a resonant thermal emitter operating in the near-infrared (≈1.5 μm) wavelength range. The emitter is based on a doped silicon photonic crystal consisting of a two dimensional square array of holes and using silicon-on-insulator technology with a device-layer thickness of 220 nm. The device is resistively heated by passing current through the photonic crystal membrane. At a temperature of ≈1100 K, we observe relatively sharp emission peaks with a Q factor around 18. A support structure system is implemented in order to achieve a large area suspended photonic crystal thermal emitter and electrical injection. The device demonstrates that weak absorption together with photonic resonances can be used as a wavelength-selection mechanism for thermal emitters, both for the enhancement and the suppression of emission.
O'Regan , B , Wang , Y & Krauss , T F 2015 , ' Silicon photonic crystal thermal emitter at near-infrared wavelengths ' Scientific Reports , vol 5 , 13415 . DOI: 10.1038/srep13415
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This work was supported by the EPSRC Programme Grant “Structured Light” EP/J01771X/1.
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