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dc.contributor.authorWang, J.
dc.contributor.authorSantamato, A.
dc.contributor.authorJiang, P.
dc.contributor.authorBonneau, D.
dc.contributor.authorEngin, E.
dc.contributor.authorSilverstone, J.W.
dc.contributor.authorLermer, M.
dc.contributor.authorBeetz, J.
dc.contributor.authorKamp, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorTanner, M.G.
dc.contributor.authorNatarajan, C.M.
dc.contributor.authorHadfield, R.H.
dc.contributor.authorDorenbos, S.N.
dc.contributor.authorZwiller, V.
dc.contributor.authorO'Brien, J.L.
dc.contributor.authorThompson, M.G.
dc.identifier.citationWang , J , Santamato , A , Jiang , P , Bonneau , D , Engin , E , Silverstone , J W , Lermer , M , Beetz , J , Kamp , M , Höfling , S , Tanner , M G , Natarajan , C M , Hadfield , R H , Dorenbos , S N , Zwiller , V , O'Brien , J L & Thompson , M G 2014 , ' Gallium arsenide (GaAs) quantum photonic waveguide circuits ' , Optics Communications , vol. 327 , pp. 49-55 .
dc.identifier.otherPURE: 134476120
dc.identifier.otherPURE UUID: 5a18bbb2-501d-4d33-b6d9-df8e03074f99
dc.identifier.otherScopus: 84901950834
dc.identifier.otherWOS: 000336969700010
dc.descriptionThis work was supported by the European FP7 project Quantum Integrated Photonics (QUANTIP), the Engineering and Physical Sciences Research Council (EPSRC), the European Research Council (ERC)en
dc.description.abstractIntegrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.
dc.relation.ispartofOptics Communicationsen
dc.rightsCopyright © 2014 Elsevier B.V. All rights reserved. NOTICE: this is the author’s version of a work that was accepted for publication in Optics Communications. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Optics Communications, 327, 2014. doi:10.1016/j.optcom.2014.02.040en
dc.subjectQuantum opticsen
dc.subjectIntegrated quantum photonicsen
dc.subjectQuantum interferenceen
dc.subjectGaAs waveguideen
dc.subjectPockels effecten
dc.subjectQC Physicsen
dc.titleGallium arsenide (GaAs) quantum photonic waveguide circuitsen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.description.statusPeer revieweden

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