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dc.contributor.authorMaier, S.
dc.contributor.authorBerschneider, K.
dc.contributor.authorSteinl, T.
dc.contributor.authorForchel, A.
dc.contributor.authorHoefling, S.
dc.contributor.authorSchneider, C.
dc.contributor.authorKamp, M.
dc.date.accessioned2015-03-28T00:01:37Z
dc.date.available2015-03-28T00:01:37Z
dc.date.issued2014-05
dc.identifier.citationMaier , S , Berschneider , K , Steinl , T , Forchel , A , Hoefling , S , Schneider , C & Kamp , M 2014 , ' Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength ' Semiconductor Science and Technology , vol. 29 , no. 5 , 052001 . https://doi.org/10.1088/0268-1242/29/5/052001en
dc.identifier.issn0268-1242
dc.identifier.otherPURE: 129141787
dc.identifier.otherPURE UUID: bb1092d1-6252-48e0-b2a3-35c135c68321
dc.identifier.otherWOS: 000336167700002
dc.identifier.otherScopus: 84898965158
dc.identifier.urihttp://hdl.handle.net/10023/6396
dc.descriptionThis work was financially supported by the German Ministry of Education and Research (BMBF) via the project QuaHL-Rep and by the State of Bavaria.en
dc.description.abstractWe demonstrate site-controlled InAs/GaAs quantum dot (QD) emission at 1.3 mu m telecommunication wavelength. The samples were fabricated by molecular beam epitaxy on patterned substrates, which have been prepared by electron beam lithography and wet chemical etching. By embedding a single layer of positioned QDs in a strain reducing InGaAs quantum well layer, we successfully shifted the emission band beyond the important telecommunication wavelength of 1.3 mu m. Furthermore, the resulting deep carrier confinement allowed us to preserve strong QD luminescence up to room temperature.
dc.format.extent4
dc.language.isoeng
dc.relation.ispartofSemiconductor Science and Technologyen
dc.rightsCopyright 2014 IOP Publishing Ltd.en
dc.subjectsite-controlled quantum dotsen
dc.subjecttelecommunication wavelengthen
dc.subjectDWELL structureen
dc.subjectSingle photon sourceen
dc.subject1.5 MU-Men
dc.subjectWell structuresen
dc.subjectLight emissionen
dc.subjectPhotoluminescenceen
dc.subjectTurnstileen
dc.subjectGAASen
dc.subjectQC Physicsen
dc.subject.lccQCen
dc.titleSite-controlled InAs/GaAs quantum dots emitting at telecommunication wavelengthen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1088/0268-1242/29/5/052001
dc.description.statusPeer revieweden
dc.date.embargoedUntil2015-03-28


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