Correlated vs. conventional insulating behavior in the Jeff = ½ vs. ¾ bands in the layered iridate Ba2IrO4
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We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature T-N. Our measurements indicate that dispersions of the relativistic Jeff = ½ vs. ¾ bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge gap survives into the paramagnetic state, only the Jeff = ½ state exhibits a strong temperature dependence and its gap softens with increasing temperature approaching T-N, while the nearly fully occupied Jeff = ¾ state which remains nearby in energy exhibits negligible changes with temperature.
Uchida , M , Nie , Y F , King , P D C , Kim , C H , Fennie , C J , Schlom , D G & Shen , K M 2014 , ' Correlated vs. conventional insulating behavior in the J eff = ½ vs. ¾ bands in the layered iridate Ba 2 IrO 4 ' Physical Review. B, Condensed matter and materials physics , vol 90 , no. 7 , 075142 . DOI: 10.1103/PhysRevB.90.075142
Physical Review. B, Condensed matter and materials physics
© 2014 American Physical Society. Reproduced in accordance with APS transfer of copyright agreement. The final version can also be found via the publisher's website: http://dx.doi.org/10.1103/PhysRevB.90.075142
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