P- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio
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In this work, we report a p- to n-type conductivity transition of GaInNAs (1.0 eV bandgap) layers in p-i-n dilute nitride solar cells continuously controlled by the V/III ratio during growth. Near the transition region, we were able to produce GaInNAs layers with very low effective electrically active doping concentrations resulting in wide depleted areas. We obtained internal quantum efficiencies (IQEs) up to 85% at 0.2 eV above the bandgap. However, the high IQE comes along with an increased dark current density resulting in a decreased open circuit voltage of about 0.2 V. This indicates the formation of non-radiant defect centers related to the p-type to n-type transition. Rapid-thermal annealing of the solar cells on the one hand helps to anneal some of these defects but on the other hand increases the effective doping concentrations.
Langer , F , Perl , S , Höfling , S & Kamp , M 2015 , ' P- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio ' , Applied Physics Letters , vol. 106 , no. 6 , 063905 . https://doi.org/10.1063/1.4909507
Applied Physics Letters
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in: Langer, F., Perl, S., Höfling, S., & Kamp, M. (2015). P- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio. Applied Physics Letters, 106(6), , and may be found at http://scitation.aip.org/content/aip/journal/apl/106/6/10.1063/1.4909507