InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature
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Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm2 are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm2 at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, a further reduction of the threshold current density to 800 A/cm2 was achieved for a 30 stage device.
Dallner , M , Hau , F , Hoefling , S & Kamp , M 2015 , ' InAs-based interband-cascade-lasers emitting around 7 μ m with threshold current densities below 1 kA/cm 2 at room temperature ' , Applied Physics Letters , vol. 106 , no. 4 , 041108 . https://doi.org/10.1063/1.4907002
Applied Physics Letters
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in: Dallner, M., Hau, F., Hoefling, S., & Kamp, M. (2015). InAs-based interband-cascade-lasers emitting around 7 mu m with threshold current densities below 1 kA/cm(2) at room temperature. Applied Physics Letters, 106(4), . The article may be found at http://scitation.aip.org/content/aip/journal/apl/106/4/10.1063/1.4907002
DescriptionThe authors acknowledge the financial support from the European Commission in the frame of the FP7 project “WideLase” (Grant No. 318798) Date of Acceptance: 19/01/2015
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