Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths
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An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1× 10 4 A/W and a response up to several pA per photon at room temperature were found.
Pfenning , A , Hartmann , F , Langer , F , Hoefling , S , Kamp , M & Worschech , L 2014 , ' Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths ' , Applied Physics Letters , vol. 104 , no. 10 , 101109 . https://doi.org/10.1063/1.4868429
Applied Physics Letters
© 2014 AIP Publishing LLC
DescriptionThis work is supported by the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER)
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