Coupling Epitaxy, Chemical Bonding, and Work Function at the Local Scale in Transition Metal-Supported Graphene
View/ Open
Date
10/2010Funder
Grant ID
SCISS HR07003
Keywords
Metadata
Show full item recordAltmetrics Handle Statistics
Altmetrics DOI Statistics
Abstract
Resonance tunneling spectroscopy and density functional theory calculations are employed to explore local variations in the electronic surface potential of a single graphene layer grown on Rh(111). A work function modulation of 220 meV is experimentally measured, indicating that the chemical bonding strength varies significantly across the supercell of the Moire pattern formed when graphene is bonded to Rh(111). In combination with high-resolution images, which provide precise knowledge of the local atomic registry at the carbon metal interface, we identify experimentally, and confirm theoretically, the atomic configuration of maximum chemical bonding to the substrate. Our observations are at odds with reported trends for other transition metal substrates. We explain why this is the case by considering the various factors that contribute to the bonding at the graphene/metal interface.
Citation
Wang , B , Caffio , M , Bromley , C , Fruchtl , H A & Schaub , R 2010 , ' Coupling Epitaxy, Chemical Bonding, and Work Function at the Local Scale in Transition Metal-Supported Graphene ' , ACS Nano , vol. 4 , no. 10 , pp. 5773-5782 . https://doi.org/10.1021/nn101520k
Publication
ACS Nano
Status
Peer reviewed
ISSN
1936-0851Type
Journal article
Rights
Copyright © 2010, American Chemical Society. This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in ACS Nano after peer review. To access the final edited and published work, see http://pubs.acs.org/doi/abs/10.1021/nn101520k
Collections
Items in the St Andrews Research Repository are protected by copyright, with all rights reserved, unless otherwise indicated.