Temperature dependence of pulsed polariton lasing in a GaAs microcavity
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The second-order correlation function g((2))(tau = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.
Tempel , J-S , Veit , F , Assmann , M , Kreilkamp , L E , Höfling , S , Kamp , M , Forchel , A & Bayer , M 2012 , ' Temperature dependence of pulsed polariton lasing in a GaAs microcavity ' New Journal of Physics , vol 14 , 083014 . DOI: 10.1088/1367-2630/14/8/083014
New Journal of Physics
© 2012 IOP Publishing and Deutsche Physikalische Gesellschaft. Jean-Sebastian Tempel et al 2012 New J. Phys. 14 083014. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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