Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities
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Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.
Lo Savio , R , Portalupi , S L , Gerace , D , Shakoor , A , Krauss , T F , O'Faolain , L , Andreani , L C & Galli , M 2011 , ' Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities ' , Applied Physics Letters , vol. 98 , no. 20 , 201106 . https://doi.org/10.1063/1.3591174
Applied Physics Letters
Copyright 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 98, Issue 20, and may be found at: http://scitation.aip.org/content/aip/journal/apl/98/20/10.1063/1.3591174