Enhanced 1.54 mu m emission in Y-Er disilicate thin films on silicon photonic crystal cavities
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We introduce an Y-Er disilicate thin film deposited on top of a silicon photonic crystal cavity as a gain medium for active silicon photonic devices. Using photoluminescence analysis, we demonstrate that Er luminescence at 1.54 mu m is enhanced by coupling with the cavity modes, and that the directionality of the Er optical emission can be controlled through far-field optimization of the cavity. We determine the maximum excitation power that can be coupled into the cavity to be 12 mW, which is limited by free carrier absorption and thermal heating. At maximum excitation, we observe that nearly 30% of the Er population is in the excited state, as estimated from the direct measurement of the emitted power. Finally, using time-resolved photoluminescence measurements, we determine a value of 2.3 for the Purcell factor of the system at room temperature. These results indicate that overcoating a silicon photonic nanostructure with an Er-rich dielectric layer is a promising method for achieving light emission at 1.54 mu m wavelength on a silicon platform.
Lo Savio , R , Miritello , M , Shakoor , A , Cardile , P , Welna , K , Andreani , L C , Gerace , D , Krauss , T F , O'Faolain , L , Priolo , F & Galli , M 2013 , ' Enhanced 1.54 mu m emission in Y-Er disilicate thin films on silicon photonic crystal cavities ' Optics Express , vol 21 , no. 8 , pp. 10278-10288 . DOI: 10.1364/OE.21.010278
© 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/oe/fulltext.cfm?uri=oe-21-8-10278&id=252896. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.
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