Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device
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Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals' difference frequency similar to 1 THz.
Kruczek , T , Leyman , R , Carnegie , D , Bazieva , N , Erbert , G , Schulz , S , Reardon , C & Rafailov , E U 2012 , ' Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device ' , Applied Physics Letters , vol. 101 , no. 8 , 081114 . https://doi.org/10.1063/1.4747724
Applied Physics Letters
© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 101, Issue 8 and may be found at http://apl.aip.org/resource/1/applab/v101/i8/p081114_s1
DescriptionThis project was funded by EPSRC under Grant EP/H015795/1.
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