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Magnetoresistance of high mobility HgTe quantum dot films with controlled charging
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dc.contributor.author | Chen, Menglu | |
dc.contributor.author | Lan, Xinzheng | |
dc.contributor.author | Hudson, Margaret H. | |
dc.contributor.author | Shen, Guohua | |
dc.contributor.author | Littlewood, Peter B. | |
dc.contributor.author | Talapin, Dmitri V. | |
dc.contributor.author | Guyot-Sionnest, Philippe | |
dc.date.accessioned | 2024-07-23T14:30:20Z | |
dc.date.available | 2024-07-23T14:30:20Z | |
dc.date.issued | 2022-01-20 | |
dc.identifier | 300220622 | |
dc.identifier | d4d8af0c-ffbc-4e63-8855-22e01388c8f4 | |
dc.identifier | 85132637747 | |
dc.identifier.citation | Chen , M , Lan , X , Hudson , M H , Shen , G , Littlewood , P B , Talapin , D V & Guyot-Sionnest , P 2022 , ' Magnetoresistance of high mobility HgTe quantum dot films with controlled charging ' , Journal of Materials Chemistry C , vol. 10 , no. 37 , pp. 13771-13777 . https://doi.org/10.1039/d1tc05202k | en |
dc.identifier.issn | 2050-7526 | |
dc.identifier.uri | https://hdl.handle.net/10023/30255 | |
dc.description | Funding: We thank Christopher Melnychuk for very useful discussions. This work was supported by the National Natural Science Foundation of China under grant number 62105022, the University of Chicago Materials Research Science and Engineering Center, which was funded by the National Science Foundation under award number DMR1420709, and by the Department of Defense (DOD) Air Force Office of Scientific Research under grant number FA9550-18-1-0099. | en |
dc.description.abstract | The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1Se state charging and a relatively high mobility (1-10 cm2 V−1 s−1), is measured as a function of temperature down to 10 K and controlled occupation of the first electronic state. There is a positive-quadratic magnetoresistance which can be several 100% at low temperature and scales like x(1 − x) where x is the filling fraction of the lowest quantum dot state in the conduction band, 1Se. This positive magnetoresistance is orders of magnitude larger than the effect estimated from mobile carriers and it is attributed to the increased confinement induced by the magnetic field. There is also a negative magnetoresistance of 1-20% from 300 K to 10 K which is rather independent of the fractional occupation, and which follows a negative exponential dependence with the magnetic field. It can be empirically fit with an effective g-factor of ∼55 and it is tentatively attributed to the reduction of barrier heights by the Zeeman splitting of the 1Se state. | |
dc.format.extent | 7 | |
dc.format.extent | 963517 | |
dc.language.iso | eng | |
dc.relation.ispartof | Journal of Materials Chemistry C | en |
dc.subject | QD Chemistry | en |
dc.subject | Chemistry(all) | en |
dc.subject | Materials Chemistry | en |
dc.subject | NDAS | en |
dc.subject.lcc | QD | en |
dc.title | Magnetoresistance of high mobility HgTe quantum dot films with controlled charging | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.identifier.doi | https://doi.org/10.1039/d1tc05202k | |
dc.description.status | Peer reviewed | en |
dc.identifier.url | https://search.chorusaccess.org/?q=10.1039%2Fd1tc05202k&doi=t | en |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2022/tc/d1tc05202k | en |
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