Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy
Abstract
AgCrSe2 exhibits remarkably high ionic conduction, an inversion symmetry-breaking structural transition, and is host to complex non-colinear magnetic orders. Despite its attractive physical and chemical properties, and its potential for technological applications, studies of this compound to date are focused almost exclusively on bulk samples. Here, we report the growth of AgCrSe2 thin films via molecular beam epitaxy. Single-orientated epitaxial growth was confirmed by X-ray diffraction, while resonant photoemission spectroscopy measurements indicate a consistent electronic structure as compared to bulk single crystals. We further demonstrate significant flexibility of the grain morphology and cation stoichiometry of this compound via control of the growth parameters, paving the way for the targeted engineering of the electronic and chemical properties of AgCrSe2 in thin-film form.
Citation
Nanao , Y , Bigi , C , Rajan , A , Vinai , G , Dagur , D & King , P 2024 , ' Epitaxial growth of AgCrSe 2 thin films by molecular beam epitaxy ' , Journal of Applied Physics , vol. 135 , no. 4 , 045303 . https://doi.org/10.1063/5.0184273
Publication
Journal of Applied Physics
Status
Peer reviewed
ISSN
0021-8979Type
Journal article
Description
Funding: The authors gratefully acknowledge the European Research Council (through the QUESTDO project, 714193) and The Leverhulme Trust (Grant No. RL-2016-006) for support. The MBE growth facility was funded through an EPSRC strategic equipment grant: EP/M023958/1. The research leading to this result has been supported by the project CALIPSO under Grant Agreement 312284 from the EU Seventh Framework Programme (FP7/2007-2013).Collections
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