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Controlling the charge density wave transition in single-layer TiTe2xSe2(1−x) alloys by band gap engineering
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dc.contributor.author | Antonelli, Tommaso | |
dc.contributor.author | Rajan, Akhil | |
dc.contributor.author | Watson, Matthew David | |
dc.contributor.author | Soltani, Shoresh | |
dc.contributor.author | Houghton, J | |
dc.contributor.author | Siemann, Gesa-Roxanne | |
dc.contributor.author | Zivanovic, Andela | |
dc.contributor.author | Bigi, Chiara | |
dc.contributor.author | Edwards, Brendan Mark | |
dc.contributor.author | King, Phil | |
dc.date.accessioned | 2023-12-21T10:30:04Z | |
dc.date.available | 2023-12-21T10:30:04Z | |
dc.date.issued | 2024-01-10 | |
dc.identifier | 297390563 | |
dc.identifier | 355e48ed-8cf1-4379-9b22-4d922284f850 | |
dc.identifier | 85180934619 | |
dc.identifier.citation | Antonelli , T , Rajan , A , Watson , M D , Soltani , S , Houghton , J , Siemann , G-R , Zivanovic , A , Bigi , C , Edwards , B M & King , P 2024 , ' Controlling the charge density wave transition in single-layer TiTe 2x Se 2(1−x) alloys by band gap engineering ' , Nano Letters , vol. 24 , no. 1 , 3c03776 , pp. 215-221 . https://doi.org/10.1021/acs.nanolett.3c03776 | en |
dc.identifier.issn | 1530-6984 | |
dc.identifier.other | ORCID: /0000-0003-0029-5059/work/149333045 | |
dc.identifier.other | ORCID: /0000-0001-5356-3032/work/149333105 | |
dc.identifier.other | ORCID: /0000-0002-7219-4241/work/151190656 | |
dc.identifier.uri | https://hdl.handle.net/10023/28921 | |
dc.description | Funding: We gratefully acknowledge support from the Leverhulme Trust via Grant No. RL-2016-006 and the UK Royal Society. The MBE growth facility was funded through an EPSRC strategic equipment grant: EP/M023958/1. | en |
dc.description.abstract | Closing the band gap of a semiconductor, into a semimetallic state, gives a powerful potential route to tune the electronic energy gains that drive collective phases like charge density waves (CDW) and excitonic insulator states. We explore this approach for the controversial CDW material monolayer (ML) TiSe2 by engineering its narrow band gap to the semimetallic limit of ML-TiTe2. Using molecular beam epitaxy, we demonstrate the growth of ML-TiTe2xSe2(1−x) alloys across the entire compositional range, and unveil how the (2 × 2) CDW instability evolves through the normal state semiconductor-semimetal transition via in situ angle-resolved photoemission spectroscopy. Through model electronic structure calculations, we identify how this tunes the relative strength of excitonic and Peierls-like coupling, demonstrating band gap engineering as a powerful method for controlling the microscopic mechanisms underpinning the formation of collective states in two-dimensional materials. | |
dc.format.extent | 7 | |
dc.format.extent | 3903555 | |
dc.language.iso | eng | |
dc.relation.ispartof | Nano Letters | en |
dc.subject | 2D materials | en |
dc.subject | Transition-metal dichalcogenide | en |
dc.subject | Charge density wave | en |
dc.subject | Excitonic insulator | en |
dc.subject | Angle-resolved photoemission spectroscopy | en |
dc.subject | Molecular beam epitaxy | en |
dc.subject | QC Physics | en |
dc.subject | DAS | en |
dc.subject.lcc | QC | en |
dc.title | Controlling the charge density wave transition in single-layer TiTe2xSe2(1−x) alloys by band gap engineering | en |
dc.type | Journal item | en |
dc.contributor.sponsor | The Leverhulme Trust | en |
dc.contributor.sponsor | The Royal Society | en |
dc.contributor.sponsor | EPSRC | en |
dc.contributor.institution | University of St Andrews. Centre for Designer Quantum Materials | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1021/acs.nanolett.3c03776 | |
dc.description.status | Peer reviewed | en |
dc.identifier.grantnumber | 2016-006 | en |
dc.identifier.grantnumber | URF/R/180026 | en |
dc.identifier.grantnumber | EP/M023958/1 | en |
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