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Ultrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDs

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dc.contributor.authorNanda, Gyana Prakash
dc.contributor.authorSk, Bahadur
dc.contributor.authorYadav, Nisha
dc.contributor.authorRajamanickam, Suresh
dc.contributor.authorDeori, Upasana
dc.contributor.authorMahashya, Rahul
dc.contributor.authorZysman-Colman, Eli
dc.contributor.authorRajamalli, Pachaiyappan
dc.date.accessioned2022-11-24T00:39:12Z
dc.date.available2022-11-24T00:39:12Z
dc.date.issued2021-12-28
dc.identifier.citationNanda , G P , Sk , B , Yadav , N , Rajamanickam , S , Deori , U , Mahashya , R , Zysman-Colman , E & Rajamalli , P 2021 , ' Ultrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDs ' , Chemical Communications , vol. 2021 , no. 100 , pp. 13728-13731 . https://doi.org/10.1039/D1CC04972Ken
dc.identifier.issn1359-7345
dc.identifier.otherPURE: 276844995
dc.identifier.otherPURE UUID: 2da528b2-aa6f-4e16-9e15-7cdf6af6b501
dc.identifier.otherORCID: /0000-0001-7183-6022/work/104252448
dc.identifier.otherScopus: 85121657864
dc.identifier.otherWOS: 000726851600001
dc.identifier.urihttps://hdl.handle.net/10023/26477
dc.descriptionFunding: The authors are grateful to Prof. Chien-Hong Cheng, National Tsing Hua University, Taiwan for providing facilities for OLED device fabrication and characterization. G.P.N. thanks Council of Scientific & Industrial Research (CSIR) India for the Junior Research Fellowship (JRF). E.Z-C. thanks the Engineering and Physical Sciences Research Council (EPSRC) EP/P010482/1 for support. E. Z.-C. is a Royal Society Leverhulme Trust Senior Research fellow (SRF\R1\201089). P. R. thanks the Indian Institute of Science (IISc) for generous financial support and the Science & Engineering Research Board (SERB), India, for the SERB-Power Grant (SPG) (Grant No: SPG/2020/000107). BS thank IISc for the C. V. Raman Fellowship under the Institute of Eminence (IoE).en
dc.description.abstractWe report highly efficient, ultrathin non-doped green and bluish-green organic light-emitting diodes (OLEDs) using a thermally activated delayed fluorescence (TADF) emitter. The green OLED with an ultrathin (~1 nm) EML showed a 2.6-fold higher external quantum efficiency (EQEmax) of 13.5% with a luminance of 17,250 cd/m-2 than the conventional (30 nm) non-doped device.
dc.format.extent4
dc.language.isoeng
dc.relation.ispartofChemical Communicationsen
dc.rightsCopyright © 2021 The Author(s). This work has been made available online in accordance with publisher policies or with permission. Permission for further reuse of this content should be sought from the publisher or the rights holder. This is the author created accepted manuscript following peer review and may differ slightly from the final https://doi.org/10.1039/D1CC04972Ken
dc.subjectQD Chemistryen
dc.subjectT-NDASen
dc.subjectMCCen
dc.subject.lccQDen
dc.titleUltrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDsen
dc.typeJournal articleen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorThe Royal Societyen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. Organic Semiconductor Centreen
dc.contributor.institutionUniversity of St Andrews. EaSTCHEMen
dc.contributor.institutionUniversity of St Andrews. School of Chemistryen
dc.identifier.doihttps://doi.org/10.1039/D1CC04972K
dc.description.statusPeer revieweden
dc.date.embargoedUntil2022-11-24
dc.identifier.grantnumberEP/P010482/1en
dc.identifier.grantnumberSRF\R1\201089en


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