Show simple item record

Files in this item

Thumbnail

Item metadata

dc.contributor.authorSmiles, MJ
dc.contributor.authorSkelton, JM
dc.contributor.authorShiel, H
dc.contributor.authorJones, LAH
dc.contributor.authorSwallow, JEN
dc.contributor.authorEdwards, HJ
dc.contributor.authorMurgatroyd, PAE
dc.contributor.authorFeatherstone, TJ
dc.contributor.authorThakur, PK
dc.contributor.authorLee, TL
dc.contributor.authorDhanak, VR
dc.contributor.authorVeal, TD
dc.date.accessioned2021-10-14T15:30:07Z
dc.date.available2021-10-14T15:30:07Z
dc.date.issued2021-10-21
dc.identifier.citationSmiles , MJ , Skelton , JM , Shiel , H , Jones , LAH , Swallow , JEN , Edwards , HJ , Murgatroyd , PAE , Featherstone , TJ , Thakur , PK , Lee , TL , Dhanak , VR & Veal , TD 2021 , ' Ge 4s 2 lone pairs and band alignments in GeS and GeSe for photovoltaics ' , Journal of Materials Chemistry A , vol. 9 , no. 39 , pp. 22440-22452 . https://doi.org/10.1039/d1ta05955fen
dc.identifier.issn2050-7488
dc.identifier.otherPURE: 276267835
dc.identifier.otherPURE UUID: 3f89ebf2-c169-4e72-b852-7057d869854c
dc.identifier.otherRIS: urn:E6664B0E8C4DFDFD58523144067A058A
dc.identifier.otherWOS: 000700540500001
dc.identifier.otherScopus: 85117120613
dc.identifier.urihttps://hdl.handle.net/10023/24142
dc.descriptionThe Engineering and Physical Sciences Research Council (EPSRC) is acknowledged for providing funding to M. J. S., J. E. N. S, and T. J. F. (Grant No. EP/L01551X/1), H. S. (Grant No. EP/N509693/1), L. A. H. J. (Grant No. EP/R513271/1), and V. R. D. and T. D. V. (Grant No. EP/N015800/1). JMS is supported by a UK Research and Innovation (UKRI) Future Leaders Fellowship (Grant No. MR/T043121/1), and previously held a University of Manchester Presidential Fellowship. The XRD facility was supported by the EPSRC under Grant No. EP/P001513/1. Diamond Light Source is acknowledged for providing beam time on beamline I09 under proposals SI21431-1 and SI23160-1. Computational modelling was performed on the UK Archer high-performance computing facility via membership of the UK Materials Chemistry Consortium, which is funded by the EPSRC (Grant No. EP/L000202, EP/R029431).en
dc.description.abstractGermanium sulfide and germanium selenide bulk crystals were prepared using a melt growth technique. X-ray photoemission spectroscopy (XPS) was used to determine ionisation potentials of 5.74 and 5.48 eV for GeS and GeSe respectively. These values were used with the previously-measured band gaps to establish the natural band alignments with potential window layers for solar cells and to identify CdS and TiO2 as sensible choices. The ionisation potential of GeS is found to be smaller than in comparable materials. Using XPS and hard X-ray photoemission (HAXPES) measurements in conjunction with density-functional theory calculations, we demonstrate that stereochemically active Ge 4s lone pairs are present at the valence-band maxima. Our work thus provides direct evidence for active lone pairs in GeS and GeSe, with important implications for the applications of these and related materials such as Ge-based perovskites.
dc.format.extent13
dc.language.isoeng
dc.relation.ispartofJournal of Materials Chemistry Aen
dc.rightsCopyright The Author(s) 2021. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.en
dc.subjectQD Chemistryen
dc.subjectNDASen
dc.subject.lccQDen
dc.titleGe 4s2 lone pairs and band alignments in GeS and GeSe for photovoltaicsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1039/d1ta05955f
dc.description.statusPeer revieweden


This item appears in the following Collection(s)

Show simple item record