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dc.contributor.authorMajchrzak, P.
dc.contributor.authorVolckaert, K.
dc.contributor.authorCabo, A. G.
dc.contributor.authorBiswas, D.
dc.contributor.authorBianchi, M.
dc.contributor.authorMahatha, S. K.
dc.contributor.authorDendzik, M.
dc.contributor.authorAndreatta, F.
dc.contributor.authorGrønborg, S. S.
dc.contributor.authorMarković, I.
dc.contributor.authorRiley, J. M.
dc.contributor.authorJohannsen, J. C.
dc.contributor.authorLizzit, D.
dc.contributor.authorBignardi, L.
dc.contributor.authorLizzit, S.
dc.contributor.authorCacho, C.
dc.contributor.authorAlexander, O.
dc.contributor.authorMatselyukh, D.
dc.contributor.authorWyatt, A. S.
dc.contributor.authorChapman, R. T.
dc.contributor.authorSpringate, E.
dc.contributor.authorLauritsen, J. V.
dc.contributor.authorKing, P. D. C.
dc.contributor.authorSanders, C. E.
dc.contributor.authorMiwa, J. A.
dc.contributor.authorHofmann, P.
dc.contributor.authorUlstrup, S.
dc.identifier.citationMajchrzak , P , Volckaert , K , Cabo , A G , Biswas , D , Bianchi , M , Mahatha , S K , Dendzik , M , Andreatta , F , Grønborg , S S , Marković , I , Riley , J M , Johannsen , J C , Lizzit , D , Bignardi , L , Lizzit , S , Cacho , C , Alexander , O , Matselyukh , D , Wyatt , A S , Chapman , R T , Springate , E , Lauritsen , J V , King , P D C , Sanders , C E , Miwa , J A , Hofmann , P & Ulstrup , S 2021 , ' Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors ' , Journal of Electron Spectroscopy and Related Phenomena , vol. 250 , 147093 .
dc.identifier.otherPURE: 274673128
dc.identifier.otherPURE UUID: 9dc9a1f8-ee22-45cd-9ed5-e069ca031b74
dc.identifier.otherWOS: 000670411800009
dc.identifier.otherScopus: 85108349218
dc.descriptionFunding: We gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant. No. 15375) and the Centre of Excellence for Dirac Materials (Grant.No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant Nos. DFF-9064-00057B and DFF-6108-00409). Access to the Artemis Facility was funded by STFC. I.M. acknowledges financial support by the International Max Planck Research School for Chemistry and Physics of Quantum Materials (IMPRS-CPQM). The authors also acknowledge The Royal Society and The Leverhulme Trust.en
dc.description.abstractThe quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS2 and WS2 on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS2. These multiple timescales are explained by Auger recombination involving MoS2 and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.
dc.relation.ispartofJournal of Electron Spectroscopy and Related Phenomenaen
dc.rightsCopyright © 2021 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY license (
dc.subjectTime- and angle-resolved photoemission spectroscopyen
dc.subjectTransition metal dichalcogenidesen
dc.subjectUltrafast carrier dynamicsen
dc.subjectBandgap renormalizationen
dc.subjectQC Physicsen
dc.titleSpectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductorsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Centre for Designer Quantum Materialsen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.description.statusPeer revieweden

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