Show simple item record

Files in this item

Thumbnail

Item metadata

dc.contributor.authorGracia-Abad, Rubén
dc.contributor.authorSangiao, Soraya
dc.contributor.authorBigi, Chiara
dc.contributor.authorKumar Chaluvadi, Sandeep
dc.contributor.authorOrgiani, Pasquale
dc.contributor.authorDe Teresa, José María
dc.date.accessioned2021-05-14T10:30:09Z
dc.date.available2021-05-14T10:30:09Z
dc.date.issued2021-04-22
dc.identifier.citationGracia-Abad , R , Sangiao , S , Bigi , C , Kumar Chaluvadi , S , Orgiani , P & De Teresa , J M 2021 , ' Omnipresence of weak antilocalization (WAL) in Bi 2 Se 3  thin films : a review on its origin ' , Nanomaterials , vol. 11 , no. 5 , e1077 . https://doi.org/10.3390/nano11051077en
dc.identifier.issn2079-4991
dc.identifier.otherPURE: 273967631
dc.identifier.otherPURE UUID: 62ec9eeb-4cf5-409b-9e4e-bc68881276e3
dc.identifier.otherJisc: 03cb75f832b649258139a25e65f74d95
dc.identifier.otherScopus: 85104543173
dc.identifier.urihttp://hdl.handle.net/10023/23191
dc.descriptionR.G.-A. acknowledges the financial support coming from the Diputación General de Aragón through a doctoral fellowship. The authors acknowledge the H2020 NFFA-Europe project 654360 and the CNR-IOM TASC Laboratory.en
dc.description.abstractTopological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, Bi2Se3 has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material. Here, we review the existing literature on the magnetotransport properties of Bi2Se3 thin films, paying thorough attention to the weak-antilocalization effect, which is omnipresent no matter the film quality. We carefully follow the different situations found in reported experiments, from the most ideal situations, with a strong surface contribution, towards more realistic cases where the bulk contribution dominates. We have compared the transport data found in literature to shed light on the intrinsic properties of Bi2Se3, finding a clear relationship between the mobility and the phase coherence length of the films that could trigger further experiments on transport in topological systems.
dc.format.extent20
dc.language.isoeng
dc.relation.ispartofNanomaterialsen
dc.rightsCopyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/ 4.0/).en
dc.subjectTopological insulatoren
dc.subjectBerry’s phaseen
dc.subjectBi2Se3 filmen
dc.subjectWeak-antilocalizationen
dc.subjectMagnetotransporten
dc.subjectQD Chemistryen
dc.subject.lccQDen
dc.titleOmnipresence of weak antilocalization (WAL) in Bi2Se3 thin films : a review on its originen
dc.typeJournal itemen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.3390/nano11051077
dc.description.statusPeer revieweden


This item appears in the following Collection(s)

Show simple item record