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Direct-ARPES and STM investigation of FeSe thin film growth by Nd:YAG laser

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Chaluvadi_2021_Direct_ARPES_and_STM_Coatings_11_00276.pdf (3.239Mb)
Date
26/02/2021
Author
Chaluvadi, Sandeep Kumar
Mondal, Debashis
Bigi, Chiara
Fujii, Jun
Adhikari, Rajdeep
Ciancio, Regina
Bonanni, Alberta
Panaccione, Giancarlo
Rossi, Giorgio
Vobornik, Ivana
Orgiani, Pasquale
Keywords
FeSe
Pulsed laser deposition
Scanning tunneling microscopy
Angle-resolved photoemission spectroscopy
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
NDAS
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Abstract
Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunnelling microscopy (STM), synchrotron radiation X-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) on fresh surfaces. FeSe PLD growth protocols were fine-tuned by optimizing target-to-substrate distance d and ablation frequency, atomically flat terraces with unit-cell step heights are obtained, overcoming the spiral morphology often observed by others. In-situ ARPES with linearly polarized horizontal and vertical radiation shows hole-like and electron-like pockets at the Γ and M points of the Fermi surface, consistent with previous observations on cleaved single crystal surfaces. The control achieved in growing quantum materials with volatile elements such as Se by in-situ PLD makes it possible to address the fine analysis of the surfaces by in-situ ARPES and XPS. The study opens wide avenues for the PLD based heterostructures as work-bench for the understanding of proximity-driven effects and for the development of prospective devices based on combinations of quantum materials.
Citation
Chaluvadi , S K , Mondal , D , Bigi , C , Fujii , J , Adhikari , R , Ciancio , R , Bonanni , A , Panaccione , G , Rossi , G , Vobornik , I & Orgiani , P 2021 , ' Direct-ARPES and STM investigation of FeSe thin film growth by Nd:YAG laser ' , Coatings , vol. 11 , no. 3 , 276 . https://doi.org/10.3390/coatings11030276
Publication
Coatings
Status
Peer reviewed
DOI
https://doi.org/10.3390/coatings11030276
ISSN
2079-6412
Type
Journal article
Rights
Copyright © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Description
Funding: D.M. acknowledges the receipt of a fellowship from the ICTP Programme for Training and Research in Italian Laboratories, Trieste, Italy. R.A. and A.B. acknowledges the support by the Austrian Science Fund (FWF) through Projects No. P26830, No. P31423 and H2020 NFFA-Europe 654360.
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  • University of St Andrews Research
URI
http://hdl.handle.net/10023/21517

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