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dc.contributor.authorIff, Oliver
dc.contributor.authorTedeschi , Davide
dc.contributor.authorMartín-Sánchez , Javier
dc.contributor.authorMoczała-Dusanowska, Magdalena
dc.contributor.authorTongay, Sefaattin
dc.contributor.authorYumigeta, Kentaro
dc.contributor.authorTaboada-Gutiérrez , Javier
dc.contributor.authorSavaresi, Matteo
dc.contributor.authorRastelli, Alonso
dc.contributor.authorAlonso-González , Pablo
dc.contributor.authorHöfling, Sven
dc.contributor.authorTrotta, Rinaldo
dc.contributor.authorSchneider, Christian
dc.date.accessioned2020-09-04T23:34:48Z
dc.date.available2020-09-04T23:34:48Z
dc.date.issued2019-10-09
dc.identifier.citationIff , O , Tedeschi , D , Martín-Sánchez , J , Moczała-Dusanowska , M , Tongay , S , Yumigeta , K , Taboada-Gutiérrez , J , Savaresi , M , Rastelli , A , Alonso-González , P , Höfling , S , Trotta , R & Schneider , C 2019 , ' Strain-tunable single photon sources in WSe 2 monolayers ' , Nano Letters , vol. 19 , no. 10 , pp. 6931-6936 . https://doi.org/10.1021/acs.nanolett.9b02221en
dc.identifier.issn1530-6984
dc.identifier.otherPURE: 261011775
dc.identifier.otherPURE UUID: cf3ec17a-fcb6-46d9-87c6-6cdec0cc0725
dc.identifier.otherScopus: 85072958244
dc.identifier.otherWOS: 000490353500027
dc.identifier.urihttp://hdl.handle.net/10023/20549
dc.description.abstractThe appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
dc.language.isoeng
dc.relation.ispartofNano Lettersen
dc.rightsCopyright © 2019 American Chemical Society. This work has been made available online in accordance with publisher policies or with permission. Permission for further reuse of this content should be sought from the publisher or the rights holder. This is the author created accepted manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1021/acs.nanolett.9b02221en
dc.subjectSIngle photon emittersen
dc.subject2D materialsen
dc.subjectElastic strain engineeringen
dc.subjectPhotoluminescenceen
dc.subjectTungsten diselenide monolayersen
dc.subjectPiezoelectric devicesen
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleStrain-tunable single photon sources in WSe2 monolayersen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1021/acs.nanolett.9b02221
dc.description.statusPeer revieweden
dc.date.embargoedUntil2020-09-05


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